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簡(jiǎn)要描述：硒化銦晶體 In2Se3(Indium Selenide)晶體尺寸：8-10毫米電學(xué)性能：半導體晶體結構：六邊形晶胞參數：a = b = 0.398 nm, c = 18.89 nm, α = β = 90°, γ = 120°晶體類(lèi)型：合成晶體純度：＞99.995%
更新時(shí)間：2024-06-03產(chǎn)品型號： 廠(chǎng)商性質(zhì)：生產(chǎn)廠(chǎng)家訪(fǎng) 問(wèn) 量：949相關(guān)文章
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硒化銦晶體 In2Se3(Indium Selenide)
晶體尺寸：8-10毫米
電學(xué)性能：半導體
晶體結構：六邊形
晶胞參數：a = b = 0.398 nm, c = 18.89 nm, α = β = 90°, γ = 120°
晶體類(lèi)型：合成
晶體純度：＞99.995%
X-ray diffraction on a 2H-In2Se3 (Indium Selenide) single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 8 XRD peaks correspond, from left to right, to (00l) with l = 4, 6, 8, 10, 12, 14, 16, 18
Powder X-ray diffraction (XRD) of a single crystal In2Se3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal In2Se3 by Energy-dispersive X-ray spectroscopy (EDX).
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