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簡要描述：硒化鎢鉬晶體 MoWSe2(Molybdenum Tungsten Diselenide)晶體尺寸：6毫米電學性能：半導體晶體結(jié)構(gòu)：六邊形晶胞參數(shù)：取決于合金成分：a = b = 0.31 -0.33 nm and c = 1.21 -1.30 nm, α = β = 90°, γ = 120°晶體類型：合成晶體純度：＞99.995%
更新時間：2024-06-03產(chǎn)品型號： 廠商性質(zhì)：生產(chǎn)廠家訪 問 量：746相關(guān)文章
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硒化鎢鉬晶體 MoWSe2(Molybdenum Tungsten Diselenide)
晶體尺寸：6毫米
電學性能：半導體
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：取決于合金成分：a = b = 0.31 -0.33 nm and c = 1.21 -1.30 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%
X-ray diffraction on a MoWSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10
Powder X-ray diffraction (XRD) of a single crystal MoWSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal MoWSe2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal MoWSe2. Measurement was performed with a 785 nm Raman system at room temperature.
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